个人简介
2013年博士毕业于南京大学，2014年2月加入华中科技大学。现任副研究员，博士生导师。主要研究方向包括基于新型半导体的先进逻辑器件、新型存储器、感存算器件、柔性电子器件、宽禁带半导体器件以及器件可靠性等。现主持首批“后摩尔时代新器件基础研究”重大研究计划（培育项目）等国基金项目3项，以及部委项目1项，作为学术骨干参与科技部等项目2项。在Nature Nanotechnology，Science Advances, Advanced Materials，Nano Letters，ACS Nano，IEEE Electron Devices Letters等国际权威期刊发表论文40余篇。入选2022年湖北省青年人才计划，荣获华中科技大学“学术新人奖”等荣誉。
电子邮箱：xfli@hust.edu.cn
研究方向
1.先进逻辑器件
随着物联网、云计算、可穿戴设备、人工智能等新兴信息产业走向成熟，以功耗驱动为中心的集成电路技术将迎来极大的发展。为此，必须发展基于全新原理的新技术,以满足人类不断增长的对信息量的需求。探索新器件技术、寻找硅材料的替代者进而延续和拓展摩尔定律成为科学界和工业界共同关注的热点问题。新型二维半导体在极限的物理厚度下表现出优异的载流子输运特性，对后摩尔时代微纳电子器件的发展具有重大意义。目前，半导体领军企业如英特尔、台积电以及欧洲微电子中心等均将二维半导体作为未来微纳电子器件最具发展潜力的主要方向之一。
2.新型存储器件
由于内核存储器、主存储器、外部存储器之间均存在较大的读写速度差距,形成了制约整个系统性能的 “存储墙”。而随着处理器速度和核数的持续增长,存储墙对系统性能的限制愈发明显。因此,迫切需要研制新型存储器（铁电存储、磁存储等）以满足信息化发展对存储设备不断增长的高密度,低功耗和高速度的要求。
3.宽禁带半导体器件
功率半导体芯片是超越摩尔定律的重要组成部分，制造功率半导体芯片的材料从传统的Si向以SiC、GaN为代表的宽禁带半导体材料发展。GaN和SiC等宽禁带半导体具有高热导率、高击穿场强、高饱和电子漂移速率和高键合能等优点，可以满足现代电子技术对高温、高功率、高压、高频以及抗辐射等恶劣条件的新要求。
代表性论文：
(1) Xuefei Li*, Xinhang Shi, Damiano Marian, David Soriano, Teresa Cusati, Giuseppe Iannaccone, Gianluca Fiori, Qi Guo, Wenjie Zhao, Yanqing Wu. Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices. Science Advances 2023, 9, eade5706.
(2) Xinhang Shi, Xuefei Li*, Qi Guo, Min Zeng, Xin Wang, and Yanqing Wu. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews 2023, 10, 011405.
(3) Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu. High-performance bilayer WSe2 pFET with record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V by direct growth and fabrication on SiO2 Substrate, 3-7 Dec. 2022, 2022 IEEE International Electron Devices Meeting (IEDM).
(4) Xinhang Shi, Xuefei Li*, Qi Guo, Han Gao, Min Zeng, Yibo Han, Shiwei Yan, and Yanqing Wu. Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics. Nano Letters 2022, 22, 7667-7673.
(5) Xuefei Li*, Zhenfeng Zhang, Tingting Gao, Xinhang Shi, Chengru Gu, and Yanqing Wu. Van der Waals epitaxial trilayer MoS2 crystals for high-speed electronics. Advanced Functional Materials 2022, 32, 2208091.
(6) Xuefei Li, Zhuoqing Yu, Xiong Xiong, Tiaoyang Li, Tingting Gao, Runsheng Wang, Ru Huang and Yanqing Wu. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances 2019, 5, eaau3194.
(7) Xuefei Li, Jingyi Wu, Yunsheng Ye, Shengman Li, Tiaoyang Li, Xiong Xiong, Xiaole Xu, Tingting Gao, Xiaolin Xie, and Yanqing Wu. Performance and reliability improvement under high current densities in black phosphorus transistors by interface engineering. ACS Applied Materials & Interfaces 2019, 11, 1587-1594.
(8) Xuefei Li, Roberto Grassi, Sichao Li, Tiaoyang Li, Xiong Xiong, Tony Low, and Yanqing Wu. Anomalous temperature dependence in metal-black phosphorus contact. Nano Letters 2018, 18, 26-31.
(9) Xuefei Li, Xiong Xiong, Tiaoyang Li, Tingting Gao, and Yanqing Wu. Optimized transport of black phosphorus top gate transistors using alucone dielectrics. IEEE Electron Device Letters 2018, 39, 1952-1955.
(10) Xuefei Li, Tiaoyang Li, Zhenfeng Zhang, Xiong Xiong, Sichao Li, and Yanqing Wu. Tunable low-frequency noise in dual-gate MoS2 transistors. IEEE Electron Device Letters 2018, 39, 131-134.
(11) Xuefei Li, Xiong Xiong, Tiaoyang Li, Sichao Li, Zhenfeng Zhang, and Yanqing Wu. Effect of dielectric interface on the performance of MoS2 transistors. ACS Applied Materials & Interfaces 2017, 9, 44602-44608.
(12) Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Sichao Li, Tiaoyang Li, Xiong Xiong, Peide Ye and Yanqing Wu. Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors. Nanoscale 2016, 8, 3572-3578.
(13) Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, Peide Ye, and Yanqing Wu. Performance potential and limit of MoS2 transistors. Advanced Materials 2015, 27, 1547-1552.
(14) Xuefei Li, Xiaobo Lu, Tiaoyang Li, Wei Yang, Jianming Fang, Guangyu Zhang, and Yanqing Wu. Noise in graphene superlattices grown on hexagonal boron nitride. ACS Nano 2015, 9, 11382-11388.
(15) Xiong Xiong, Jiyang Kang, Shiyuan Liu, Anyu Tong, Tianyue Fu, Xuefei Li, Ru Huang, and Yanqing Wu. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Advanced Materials 2022, 34, 2106321.
(16) Xiong Xiong, Anyu Tong, Xin Wang, Shiyuan Liu, Xuefei Li, Ru Huang, and Yanqing Wu. Demonstration of vertically-stacked CVD Monolayer Channels: MoS2 nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET, 11-16 Dec. 2021, 2021 IEEE International Electron Devices Meeting (IEDM).
(17) Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song, and Yanqing Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 2020, 3, 106-112.
(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
(19) Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu, Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
(21) Shengman Li, Mengchuan Tian, Qingguo Gao, Mengfei Wang, Tiaoyang Li, Qianlan Hu, Xuefei Li, Yanqing Wu. Nanometre-thin indium tin oxide for advanced high-performance electronics. Nature Materials 2019, 18, 1091-1097.
(22) Xiong Xiong, Xuefei Li, Mingqiang Huang, Tiaoyang Li, Tingting Gao, and Yanqing Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 2018, 39, 127-130.
(23) Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric. AIP Advances 2018, 8, 125314.
(24) Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters 2018, 39, 1377-1380.
(25) Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications 2018, 9, 4778.
